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IXFN100N50Q3
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXFN) Outline
g fs
C iss
C oss
C rss
R Gi
V DS = 20V, I D = 50A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate Input Resistance
40
65
13.8
1690
177
0.12
S
nF
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
R G = 0.5 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
40
20
50
15
255
110
115
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.13 ° C/W
R thCS
Source-Drain Diode
0.05
° C/W
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
100
400
1.5
A
A
V
t rr
Q RM
I RM
Note
I F = 50A, -di/dt = 200A/ μ s
V R = 100V, V GS = 0V
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
3.5
30.0
250 ns
μ C
A
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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